OU Xin
Title: Professor
Subject: Advanced SOI materials and heterogenous integration
Phone: +86-021-62511070
Fax: +86-021-62524192
Email: ouxin@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai, China
HONORS AND AWARDED RESEARCH FUNDS
1.“IBMM”prize granted by the international committee of 20th International Conference on Ion Beam Modification of Materials.
2.“National Science Fund for Outstanding Youth Scholars” for the achievements in the research: Ion beam fabrication and modification of materials for informatics, Fund 1.5 Million Yuan (2016)
3.“Pujiang talent program” of Shanghai Government, Fund 0.2 Million Yuan (2013)
4.“EMRS Best Poster Award” granted by European Materials Research Society Conference, 27-31.05.2013, Strasbourg, France (2013)
5.“2010 Research Award” of Helmholz-Zentrum Dresden-Rossendorf, Germany. This is the annual award of German Helmholtz HZDR research center (2011)
6.“Excellent Doctoral Thesis Award” Granted by Chinese Academy of Science (2011)
7.“Young Investigator Award” granted by 18th International Conference on Ion Implantation Technology (IIT 2010), 2010, Kyoto, Japan (2010)
8.“Graduate Outstanding Achievements (Thesis)” Granted by Shanghai Government. (2011)
RESEARCH EXPERIENCE
SELECTED PUBLICATIONS
1.X. Ou*, K.H. Heinig, R. Hubner, J. Grenzer, X. Wang, M. Helm, J. Fassbender, S. Facsko*, Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies, Nanoscale 45, 18928 (2015).
2.T.You, X. Ou*, G.Niu, F. B？rwolf, G. Li, N. Du, D. Bürger, I. Skorupa, Q. Jia, W. Yu, X.Wang, O.G. Schmidt, and H.Schmidt, Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes, Scientific Reports 5, 18623(2015).
3.X. Ou, A. Keller, M. Helm, J. Fassbender, S. Facsko Reverse epitaxy of Ge: ordered and facetted surface patterns,Physical Review Letters 111, 016101(2013).
4.X. Ou*, Y. Shuai, W. Luo, P.F. Siles, R. K？gler, J. Fiedler, H. Reuther, S. Zhou, R. Hübner, S. Facsko, M. Helm, T. Mikolajick, O. G. Schmidt, H. Schmidt, Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts, ACS Applied Materials & Interfaces 5:23, 12764-12771 (2013).
5.Y. Shuai, X. Ou* W. Luo, A. Muecklich, D. Buerger, S. Zhou, C. Wu, Y. Chen, W.L. Zhang, M. Helm, T. Mikolajick, O.G. Schmidt, H. Schmidt Key concepts behind forming-free resistive switching incorporated with rectifying transport properties, Scientific Reports 3:2208 (2013).
6.Y. Shuai, X. Ou*, N. Du, C. Wu, W.L. Zhang, D. Buerger, C. Mayr, R. Schueffny, S. Zhou, M. Helm, H. Schmidt Nonvolatile multilevel resistive switching in Ar+ irradiated BiFeO3 thin films, IEEE Electron Device Letter 34, 1 (2013).
7.X. Ou*, R. K？gler, H.B. Zhou, W. Anwand, J. Grenzer, R. Hübner, M. Voelskow, M. Butterling, S. Zhou, W. Skorupa, Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation, Physical Review B 86, 224103 (2012).
8.X. Ou*, Nadine Geyer, R. K？gler, P. Werner, W. Skorupa, Acceptor deactivation in individual Si nanowires: from thick to ultrathin, Applied Physics Letters 98, 253103 (2011).
9.X. Ou*, P.D. Kanungo, R. K？gler, P. Werner, U. G？sele, W. Skorupa, and X. Wang
Three-Dimensional Carrier Profiling of Individual Si Nanowires, Advanced Materials 22, 4020-4024 (2010).