DI Zengfeng

Title: Professor
Subject: Microelectronics
Phone: +86-021-62511070
Fax: +86-021-62524192
Address: 865 Changning Road, Shanghai, China


2015 National High-level Personnel of Special Support Program Ten Thousand Talent Program (Young top-notch talent)

2012 National Science Foundation for Excellent Young Scholars

2011 Hundred Talent Program (Grade A for final evaluation 2015)

2008 National Top 100 Excellent Doctoral Dissertations

2007 Outstanding Ph.D Thesis of Chinese Academy of Sciences

2006 CAS President Award (Special Prize)


DI, Zengfeng, Ph.D., Professor of Shanghai Institute of Microsystem and Information Technology (SIMIT). He graduated from department of intensive instruction of fundamental sciences of Nanjing University in 2001, and earned his Ph. D degree in microelectronics and solid-state electronics from SIMIT in 2006. From March 2004 to September 2005, he conducted joint research training in department of physics and materials science of City University of Hong Kong. After graduation, he worked as a directors postdoctoral fellow at Los Alamos National Laboratory of Department of Energy US from 2006 to 2010. In September 2010, he was appointed professor of SIMIT as an outstanding talent from overseas. His researches focus on silicon-on-insulator, silicon based semiconductor materials, the interaction of energetic particle with solids. He has published more than 100 peer-reviewed papers and obtained 5 authorized US invention patents with 55 authorized China invention patents.


(1Xiaohu Zheng, Lei Gao, Quanzhou Yao, Qunyang Li,* Miao Zhang, Xiaoming Xie, Shan Qiao, Gang Wang, Tianbao Ma,* Zengfeng Di,* Jianbin Luo & Xi Wang, Robust ultra-low friction state of graphene via moiré superlattice confinement, Nature Communications, 7 (2016) 13204

2Zhiqiang Mu, Haochi Yu, Miao Zhang, Aimin Wu, Gongmin Qi, Paul K. Chu, Zhenghua An, * Zengfeng Di,* and Xi Wang, Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength Nano Letters, 17 (2017) 1552

3Jiayun Dai, Danxia Wang, Miao Zhang, Tianchao Niu, Ang Li, Mao Ye, Shan Qiao, Guqiao Ding, Xiaoming Xie, Yongqiang Wang, Paul K. Chu, Qinghong Yuan,* Zengfeng Di,* Xi Wang, Feng Ding, and Boris I. Yakobson, How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface, Nano Letters, 16 (2016) 3160

4Jingxian Zhang, Ning Zhao, Miao Zhang, Yiqiu Li, Paul K. Chu, Xiangxin Guo,* Zengfeng Di,* Xi Wang, Hong Li, Flexible and Ion-Conducting Membrane Electrolytes for Solid-State Lithium Batteries: Dispersion of Garnet Nanoparticles in Insulating Polyethylene Oxide, Nano Energy, 28 (2016) 447

5Xiaohu Zheng, Miao Zhang, Xiaohua Shi, Gang Wang, Li Zheng, Yuehui Yu, Anping Huang, Paul K. Chu, Heng Gao, Wei Ren*, Zengfeng Di* and Xi Wang, Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics, Advanced Functional Materials, 25 (2015) 1805

6Gang Wang, Miao Zhang, Su Liu, Xiaoming Xie, Guqiao Ding, Yongqiang Wang, Paul K. Chu, Heng Gao, Wei Ren, Qinghong Yuan*, Peihong Zhang, Xi Wang and Zengfeng Di*,Synthesis of Layer-Tunable Graphene A Combined Kinetic Implantation and Thermal Ejection Approach, Advanced Functional Materials, 25 (2015) 3666

7Qinglei Guo, Miao Zhang, Zhongying Xue, Gang Wang, Da Chen, Ronggen Cao, Gaoshan Huang, Yongfeng Mei,* Zengfeng Di* and Xi Wang, Deterministic Assembly of Flexible Si-Ge Nanoribbons via Edge-Cutting Transfer and Printing for van der Waals Heterojunctions, Small, 11 (2015) 4044

8Zengfeng Di*, Xian-Ming Bai, Qiangmin Wei, Jonghan Won, Richard G. Hoagland, Yongqiang Wang, Amit Misra, Blas P. Uberuaga, and Michael Nastasi, Tunable Helium bubble superlattice ordered by screw dislocation network, Physical Review B, 84 (2011) 052101

9Z. F. Di*, M. Q. Huang, Y. Q. Wang, and M. Nastasi, Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon Applied Physics Letters, 97 (2010) 194101

10Z. F. Di*, Y. Q. Wang, M. Nastasi, and N. David Theodore, Origin of reverse annealing effect in hydrogen-implanted silicon, Applied Physics Letters, 96 (2010) 154103