Subject: Wide Band-gap Semiconductor Power Devices
Address: 865 Changning Road, Shanghai, China
1. Shanghai science and Technology Commission Project, Research and development of key technologies for SiC power devices for new energy vehicles (15511102400), 6 million RMB, Principal Investigator
2. National Natural Science Foundation of China, the research on the interfacial characteristics between Ⅲ-Ⅴ compound semiconductor/ high-k (11175229), 0.7 million RMB, Principal Investigator
Professor Xinhong Cheng received her BS degree in Physics From Jilin University in 1992, MS degree in Materials Science from Metal Institute of CAS in 1997, and PhD degree in Microelectronics from Shanghai Institute of Microsystem and Information Technology (SIMIT) of CAS in 2005. Now she works in SIMIT as a professor.
In 2012, Professor Cheng and her colleagues have accomplished the technology development of 600V SOI LDMOS process, which is transferred to Central Semiconductor Manufacturing Corporation (CSMC) to form SOI HV process. Now She focus on the research of GaN HEMT and SiC MOSFET, pay more attention to the interfacial passivation, ion implantation excitation and high energy ion irradiation effect in wide band-gap semiconductor power devices.
1.Lingyan Shen, Xinhong Cheng, et al., Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation, IEEE Electron Device Letters, DOI: 10.1109/LED.2017.2682261.
2.Qian Wang, Xinhong Cheng, et al. , Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer, Applied Surface Science, 410 (2017) 326-331.
3.Qian Wang, Xinhong Cheng, et al. ,Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy, Applied Surface Science, 409 (2017) 71-76.
4.Qian Wang, Xinhong Cheng, et al. ,Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3, RSC Advances, 7 (2017) 11745.
5.Qian Wang, Xinhong Cheng, et al. ,PEALD Induced Interface Engineering of AlNO/AlGaN/GaN MIS Diode with Alternate Insertion of AlN in Al2O3, The 29th International Symposium on Power Semiconductor Devices and Ics, (ISPSD 2017).
6.Lingyan Shen, Zhongjian Wang, et al. , Negative Differential Resistance in the I-V Curves of Al2O3/AlGaN/GaN MIS Structures, RSC Advances, 6 (2016), 5671.
7.Lingyan Shen, Xinhong Cheng, et al., Passivation effect of graphene on AlGaN/GaN Schottky diode, RSC Adv., 5（2015） 86593
8.Lingyan Shen, Xinhong Cheng , et al.,Property of an AlGaN/GaN MIS Diode with Si3N4/Al2O3 Bilayer Gate Dielectric Films，Materials Science Forum 815 (2015) 30-35
9.Duo Cao, Xinhong Cheng, et al., Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures, RSC Adv., 5(2015)37881
10.Li Zheng , Xinhong Cheng, et al., Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment，ACS Appl. Mater. Interfaces,(2014) 6,7014
11.Li Zheng, Xinhong Cheng, et al., Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition, Appl. Phys. Lett. 104, 023112 (2014);
12.Dawei Xu, Xinhong Cheng, et al., .Multi-gates SOI LDMOS for improved on-state performance ， Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on, DOI: 10.1109/ISPSD.2014.6856004
13.Chao Xia, Xinhong Cheng, et.al, Improvement of SOI Trench LDMOS performance with double vertical metal field plate, IEEE Transaction on Electron Devices. 61 (10)(2014)477.
14.Duo Cao, Xinhong Cheng, et al., Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films, Applied Physics Letters 103, 081607 (2013);