HYBRID MATERIAL ACCUMULATION MODE CMOS FET WITH ENTIRELY SURROUNDING CYLINDRICAL GATE
| Name: |
HYBRID MATERIAL ACCUMULATION MODE CMOS FET WITH ENTIRELY SURROUNDING CYLINDRICAL GATE |
| The patent category: |
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| Application number: |
PCT/CN2010/070642 |
| Application date: |
2010/2/11 |
| First inventor: |
XIAO, Deyuan |
| Other inventors: |
WANG, Xi;ZHANG, Miao;CHEN, Jing;XUE, Zhongying |
| Other note: |
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