METHOD FOR SUPPRESSING FLOATING-BODY EFFECT OF SOI MOS DEVICE BY ION IMPLANTATION WITH HIGH ANGLE
Name: |
METHOD FOR SUPPRESSING FLOATING-BODY EFFECT OF SOI MOS DEVICE BY ION IMPLANTATION WITH HIGH ANGLE |
The patent category: |
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Application number: |
PCT/CN2010/075135 |
Application date: |
2010/7/14 |
First inventor: |
CHEN, Jing |
Other inventors: |
HUANG, Xiaolu;LUO,Jiexin;WU, Qingqing;WANG, Xi |
Other note: |
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