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EPITAXIAL GROWTH METHOD FOR NiSiGe USING INSERTED Al LAYER
Name:
EPITAXIAL GROWTH METHOD FOR NiSiGe USING INSERTED Al LAYER
The patent category:
Application number:
PCT/CN2011/077528
Application date:
2011/7/25
First inventor:
ZHANG, Miao
Other inventors:
ZHANG, Bo;XUE, Zhongying;WANG, Xi
Other note:
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