HEXAGONAL BORON NITRIDE SUBSTRATE HAVING STEPS OF SINGLE ATOM LAYER, PREPARATION PROCESS AND USE THEREOF
| Name: |
HEXAGONAL BORON NITRIDE SUBSTRATE HAVING STEPS OF SINGLE ATOM LAYER, PREPARATION PROCESS AND USE THEREOF |
| The patent category: |
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| Application number: |
PCT/CN2011/078061 |
| Application date: |
2011/8/5 |
| First inventor: |
DING, Guqiao |
| Other inventors: |
TANG, Shujie;XIE, Xiaoming;JIANG, Mianheng |
| Other note: |
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