TCAD SIMULATION CALIBRATION METHOD OF SOI FIELD EFFECT TRANSISTOR
| Name: |
TCAD SIMULATION CALIBRATION METHOD OF SOI FIELD EFFECT TRANSISTOR |
| The patent category: |
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| Application number: |
PCT/CN2011/080076 |
| Application date: |
2011/9/23 |
| First inventor: |
CHAI, Zhan |
| Other inventors: |
CHEN, Jing;LUO, Jiexin;WU, Qingqing;WANG, Xi |
| Other note: |
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