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SIGE HETEROJUNCTION TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
Name:
SIGE HETEROJUNCTION TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
The patent category:
Application number:
PCT/CN2012/081589
Application date:
2012/9/19
First inventor:
BIAN, Jiantao
Other inventors:
XUE, Zhongying;DI, Zengfeng;ZHANG, Miao
Other note:
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