PHASE CHANGE MEMORY LOCATION FOR REPLACING DRAM AND FLASH AND MANUFACTURING METHOD THEREFOR
| Name: |
PHASE CHANGE MEMORY LOCATION FOR REPLACING DRAM AND FLASH AND MANUFACTURING METHOD THEREFOR |
| The patent category: |
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| Application number: |
PCT/CN2012/087578 |
| Application date: |
2012/12/26 |
| First inventor: |
RAO, Feng |
| Other inventors: |
REN, Kun;SONG, Zhitang;GONG, Yuefeng;REN, Wanchun |
| Other note: |
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