ANTIMONY-RICH HIGH-SPEED PHASE-CHANGE MATERIAL FOR USE IN PHASE-CHANGE MEMORY DEVICE, MANUFACTURING METHOD FOR THE MATERIAL, AND APPLICATION THEREOF
Name: |
ANTIMONY-RICH HIGH-SPEED PHASE-CHANGE MATERIAL FOR USE IN PHASE-CHANGE MEMORY DEVICE, MANUFACTURING METHOD FOR THE MATERIAL, AND APPLICATION THEREOF |
The patent category: |
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Application number: |
PCT/CN2012/087596 |
Application date: |
2012/12/27 |
First inventor: |
SONG, Zhitang |
Other inventors: |
WU, Liangcai; PENG, Cheng;RAO, Feng;ZHU, Min |
Other note: |
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