Patents
SOI-BASED LONGITUDINAL SIGE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
Name: SOI-BASED LONGITUDINAL SIGE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
The patent category:
Application number: PCT/CN2012/087669?
Application date: 2012/12/27
First inventor: CHEN, Jing
Other inventors: YU, Tao;LUO, Jiexin;WU, Qingqing; CHAI, Zhan
Other note: