SOI-BASED LONGITUDINAL SIGE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
Name: |
SOI-BASED LONGITUDINAL SIGE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF |
The patent category: |
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Application number: |
PCT/CN2012/087669? |
Application date: |
2012/12/27 |
First inventor: |
CHEN, Jing |
Other inventors: |
YU, Tao;LUO, Jiexin;WU, Qingqing; CHAI, Zhan |
Other note: |
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