Patents
METHOD FOR MANUFACTURING GRAPHENE-BASED DUAL-GATE MOSFET
Name: METHOD FOR MANUFACTURING GRAPHENE-BASED DUAL-GATE MOSFET
The patent category:
Application number: PCT/CN2012/087675
Application date: 2012/12/27
First inventor: CHEN, Jing
Other inventors: YU, Tao;LUO, Jiexin;WU, Qingqing;CHAI, Zhan
Other note: