METHOD FOR FABRICATING SILICON-ON-INSULATOR (SOI) HIGH-VOLTAGE POWER DEVICE CHIP WITH TRENCH STRUCTURE
| Name: |
METHOD FOR FABRICATING SILICON-ON-INSULATOR (SOI) HIGH-VOLTAGE POWER DEVICE CHIP WITH TRENCH STRUCTURE |
| The patent category: |
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| Application number: |
13133886 |
| Application date: |
2010/9/7 |
| First inventor: |
CHENG, Xinhong |
| Other inventors: |
WANG, Zhongjian;YU, Yuehui;HE, Dawei;XU, Dawei;XIA, Chao |
| Other note: |
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