SOI Semiconductor Structure with a Hybrid of Coplanar Germanium and III-V, and Preparation Method thereof
| Name: |
SOI Semiconductor Structure with a Hybrid of Coplanar Germanium and III-V, and Preparation Method thereof |
| The patent category: |
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| Application number: |
13636128 |
| Application date: |
2012/5/16 |
| First inventor: |
DI, Zengfeng |
| Other inventors: |
BIAN, Jiantao;ZHANG, Miao;WANG, Xi |
| Other note: |
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