E-mail
|
OA
|
ARP
|
Contact
E-mail
|
OA
|
ARP
|
Contact
Home
ABOUT US
History
Brief Introduction
Administrators
Address from the Director
Organization
Landscape
Contact US
RESEARCH
Research Divisions
Major Program
Research Achievements
Publications List
Patents List
PEOPLE
Academicians
Outstanding Talents
Senior Talent
Join Us
COOPERATION
Overview
Research Collaborations
International Conferences
PLATFORM
Research Divisions
Major Program
Achievements
Publications List
Patents List
Career
Home
>
Research
>
Patents
Patents
Preparation Method for Full-Isolated SOI with Hybrid Crystal Orientations
Name:
Preparation Method for Full-Isolated SOI with Hybrid Crystal Orientations
The patent category:
Application number:
13636126
Application date:
2012/5/16
First inventor:
BIAN, Jiantao
Other inventors:
Jiantao;DI, Zengfeng;ZHANG, Miao
Other note:
Copyright © Shanghai Institute of Microsystem And Information Technology
ADD：865 Changning Road, Shanghai 200050, China TEL：86-21-62511070 FAX：86-21-62513510