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SILICON-GERMANIUM HETEROJUNCTION TUNNEL FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREOF
Name:
SILICON-GERMANIUM HETEROJUNCTION TUNNEL FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREOF
The patent category:
Application number:
13811268
Application date:
2012/9/19
First inventor:
BIAN, Jiantao
Other inventors:
XUE, Zhongying;DI, Zengfeng;ZHANG, Miao
Other note:
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