Patents
Name Application Number
MANUFACTURING METHOD FOR SOI HIGH VOLTAGE POWER DEVICE PCT/CN2010/076667
FABRICATING METHOD OF COPPER INTERCONNECTION STRUCTURE WITH MIM CAPACITOR AND STRUCTURE FABRICATED THEREBY PCT/CN2010/075146
MOS STRUCTURE FOR RESTRAINING THE FBE OF SOI PCT/CN2010/075141
METHOD FOR SUPPRESSING FLOATING-BODY EFFECT OF SOI MOS DEVICE BY ION IMPLANTATION WITH HIGH ANGLE PCT/CN2010/075135
FLOATING BODY DRAM UNIT STRUCTURE, ITS MANUFACTURING TECHNIQUES AND ITS OPERATION METHOD PCT/CN2010/075132
MOS-TYPE ESD PROTECTION STRUCTURE FOR SILICON-ON-INSULATOR TECHNOLOGIES AND METHOD THEREOF PCT/CN2010/075160
VERTICAL SOI BIPOLAR TRANSISTOR AND MAKING METHOD THEREOF PCT/CN2010/075156
HYBRID CRYSTAL ORIENTATION INVERSION MODE GATE-ALL-AROUND CMOS FIELD EFFECT TRANSISTOR PCT/CN2010/070653
HYBRID MATERIAL INVERSION-MODE CYLINDRICAL GATE-ALL-AROUND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) FIELD EFFECT TRANSISTOR PCT/CN2010/070650
COMOUND MATERIAL ACCUMULATION TYPE OF WHOLE ENCLOSING GATE CMOS FIELD EFFECT TRANSISTOR PCT/CN2010/070645
MIXED MATERIAL INVERTED MODE GATE-ALL-AROUND CMOS FIELDEFFECT TRANSISTOR PCT/CN2010/070643
HYBRID MATERIAL ACCUMULATION MODE CMOS FET WITH ENTIRELY SURROUNDING CYLINDRICAL GATE PCT/CN2010/070642
HYBRID CRYSTAL ORIENTATED ACCUMULATION TYPE GATE-ALL-AROUND CMOS FIELD EFFECT TRANSISTOR PCT/CN2010/070636
WHOLE ENCLOSING GATE CMOS FIELD EFFECT TRANSISTOR PCT/CN2010/070633
TRANSMITTING DEVICE, RECEIVING DEVICE AND METHOD BASED ON MULTIPLE SUB-BANDS FILTERS SET PCT/CN2006/002347