Patents
Name Application Number
METHOD OF MANUFACTURING SOI-BASED SIGE-HBT TRANSISTOR PCT/CN2012/087731
METHOD OF MANUFACTURING SOI-BASED SIGE-HBT TRANSISTOR PCT/CN2012/087707
SIX-TRANSISTOR STATIC RANDOM ACCESS MEMORY UNIT AND MANUFACTURING METHOD THEREOF PCT/CN2012/087700
METHOD FOR MANUFACTURING GRAPHENE-BASED DUAL-GATE MOSFET PCT/CN2012/087675
SOI-BASED LONGITUDINAL SIGE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF PCT/CN2012/087669?
TISIN MATERIAL LAYER-CONTAINING PHASE-CHANGE MEMORY UNIT AND MANUFACTURING METHOD THEREFOR PCT/CN2012/087598
PHASE-CHANGE MEMORY UNIT AND MANUFACTURING METHOD THEREFOR PCT/CN2012/087647
ANTIMONY-RICH HIGH-SPEED PHASE-CHANGE MATERIAL FOR USE IN PHASE-CHANGE MEMORY DEVICE, MANUFACTURING METHOD FOR THE MATERIAL, AND APPLICATION THEREOF PCT/CN2012/087596
PHASE CHANGE MEMORY LOCATION FOR REPLACING DRAM AND FLASH AND MANUFACTURING METHOD THEREFOR PCT/CN2012/087578
SB-TE-TI PHASE CHANGE STORAGE MATERIAL AND TI-SB2TE3 PHASE CHANGE STORAGE MATERIAL PCT/CN2012/087572
CAPACITIVE ACCELEROMETER OF BENT FLEXIBLE BEAM AND MANUFACTURING METHOD PCT/CN2012/085811
CAPACITIVE ACCELEROMETER OF H-SHAPED BEAM AND MANUFACTURING METHOD PCT/CN2012/085723
MICROMECHANICAL CHIP TEST PROBE CARD AND METHOD OF FABRICATING SAME PCT/CN2012/082420
METHOD FOR PREPARING ULTRATHIN ON-INSULATOR MATERIAL USING ADSORPTION OF DOPED ULTRATHIN LAYER PCT/CN2012/081894
METHOD FOR FABRICATING GOI WAFER STRUCTURE PCT/CN2012/081890